Characterization of passive CMOS strip sensors

Recent advances in CMOS imaging sensor technology, e.g. pixel sensors, have proven that the process is radiation tolerant enough to cope with certain levels required for tracking layers hadron collider experiments. With ever-increasing area covered by silicon detectors cost effective alternatives current sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of strip produced a passive p-CMOS process. Electrical characterization charge collection 90Sr source laser infrared wavelength showed no effect stitching on performance sensor.